Samsung starts mass producing industry’s first 32-Layer 3D V-NAND flash memory

Samsung Electronics Co., Ltd has begun mass producing the industry’s first three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers, which is its second generation V-NAND offering.

  • 10 years ago Posted in

Samsung’s 32-layer 3D V-NAND – also referred to as Vertical NAND– requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND, yet delivers much greater production efficiency because Samsung can use essentially the same equipment it used for production of the first generation V-NAND.


In addition, Samsung has just launched a line-up of premium SSDs based on its 2nd generation V-NAND flash memory with 128 gigabyte (GB), 256GB, 512GB and 1TB storage options. After introducing 3D V-NAND-based SSDs to data centers last year, Samsung is now extending its V-NAND SSD line-up to high-end PC applications, in expanding its market base.


“We increased the availability of our 3D V-NAND by introducing an extensive V-NAND SSD line-up that covers the PC market in addition to data centers,” said Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics. “Look for us to provide a consistent, timely supply of high-performance, high-density V-NAND SSDs as well as core V-NAND chips for IT customers globally, contributing to fast market adoption of 3D NAND technology.”
The new 3D V-NAND-based SSDs have approximately twice the endurance for writing data and consume 20 percent less power, compared to planar (2D) MLC NAND-based drives.


Later this year, Samsung will introduce additional premium 3D-based SSDs based on this 2nd generation V-NAND memory with even higher reliability and higher-density in satisfying a diversity of customer needs.
 

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